Language
EnglishEnglish
GermanGerman
JapaneseJapanese
FranceFrance
SwedenSweden
NetherlandsNetherlands
TurkeyTurkey
Russia<Russia

Follow us

facebook linkdin twitter whatsapp
Share

CVD Diamond Substrate

Specific Information
Diamond can be widely used in some fields such as ultra-precision machining, luxury jewelry, optics, quantum materials, electronic materials and semiconductor devices due to its large bandgap, highest thermal conductivity, low thermal expansion, incredible electrical resistivity, widest optical transparency and other good properties.
Get a free quote
  • specification
  • Properties
  •                          
     

    1. Single-crystal diamond substrate
     
    Item Single-crystal diamond substrate
    Diameter 5*5mm 10*10mm 20*20mm 25.4±0.3mm
    Thickness 300~500μm
    Surface Orientation <100>
    Growth Method MPCVD
    Surface Finish Grind,SSP,DSP
    Polish roughness(AFM,5*5μm) 1~10nm
    Thermal conductivity 1500-2300W/m.K

    2. Polycrystalline diamond substrate
     
    Item Polycrystalline diamond substrate
    Diameter 10*10 mm 25.4±0.3mm 50.8±0.5mm 100±0.5mm
    Thickness 300~500μm
    Growth Method MPCVD
    Surface Finish Grind,SSP,DSP
    Polish roughness(AFM,5*5μm) 1~10nm
    Thermal conductivity 1000-2000W/m.K

    3. Sample testing data

    ● AFM surface roughness of single-crystal diamond



    ● TTV, WARP, BOW, and surface roughness of polycrystalline diamond



    4. Customization specifications:


    * Various sizes and shapes such as 5*5mm,10*10mm,1~4inch.
    * Various thicknesses:0.1~5mm
    * Various surface roughness such as slicing,lapping.
    * crystal type:single crystal diamond or polycrystalline diamond.
     
  • Diamond is the hardest substance in the world and it is gaining more attention for its outstanding optical, electrical, mechanical, and thermal properties. Artificial diamond can be grown by MPCVD.In this process diamond is grown by starting with a carbon containing gas like methane and hydrogen, then carbon atoms are created by high pressure and high temperature,which is responsible for the deposition on the substrates to form diamond single crystal.

     

    Crystal Structure Cubic
    Lattice Constant(nm) 0.3567Å
    Density(g/cm3) 3.52
    Melting point(℃) 3550
    Mohs Hardness(mohs) 10
    Dielectric Constant 5.68
    Band Gap(eV) 5.47
    Breakdown Electrical Field (MV/cm) 10
    Thermal Conductivity(W/cm.K) 12-18
    Thermal Expansion  3.196*10-6/k
    Refractive Index  2.417

Recommended Products

2022 © SiC Wafers and GaN Wafers Manufacturer     网站统计