Single-crystal diamond substrates, formed by sp³-hybridized carbon atoms in a tetrahedral covalent bonding configuration, feature a long-range ordered crystal lattice free of grain boundaries. This unique structure enables exceptional performance across mechanical, thermal, optical, and electrical domains. Often r

Figure: Typical laser machining of SiC — cutting, ablation and microfabrication.
Silicon carbide (SiC) has emerged as a cornerstone material in advanced power electronics, RF devices, and harsh-environment applications due to its exceptional mechanical, thermal, and electrical properties. However, these sam

(Single-Crystal, Polycrystalline, and Diamond Films)

Diamond has emerged as an ideal thermal management substrate for heterogeneous integration with wide bandgap semiconductors such as GaN and SiC, thanks to its ultra-high thermal conductivity (exceeding 2000 W/m·K), excellent chemical inertness, and wide bandg

Single crystal diamond substrates are widely recognized as one of the most advanced materials for next-generation semiconductor and optical applications. Thanks to their sp³-hybridized carbon atomic structure and long-range ordered crystal lattice without grain boundaries, single crystal diamond exhibits exception

Diamond substrates can be broadly classified into single-crystal diamond and polycrystalline diamond based on their crystal structure. Both types benefit from diamond’s intrinsic advantages, such as ultra-high thermal conductivity and extreme hardness, making them indispensable in semiconductors, optics, and prec

(4H-N / 6H-N / 4H-P / 6H-P / 3C-N / 4H Semi-Insulating)

Silicon carbide (SiC) is a wide-bandgap semiconductor material with more than 200 known polytypes. Among them, 4H, 6H (hexagonal polytypes), and 3C (cubic polytype) are the most widely studied and commercially relevant.
By introducing controlled dopants, SiC sub

In the field of advanced packaging, 12-inch sapphire wafers, fused silica wafers, silicon wafers, and silicon carbide (SiC) wafers each play distinct roles due to their fundamentally different material properties. These differences determine their respective suitability for specific packaging architectures and performa

Gallium nitride (GaN) is a third-generation wide-bandgap semiconductor widely used in high-frequency, high-voltage, and high-power applications. The performance of GaN-based devices is fundamentally determined by the quality of the epitaxial layers, which in turn is strongly influenced by the choice of substrate materi

Introduction“A seemingly ordinary set of numbers defines the reliability boundaries of everything from laboratory precision instruments to heat-resistant glass kettles used at home.”
In the field of glass materials, terms such as BF33, Borosilicate 3.3, or high borosilicate glass are often associated with B

With the rapid development of optoelectronics, semiconductor manufacturing, laser technology, and infrared imaging, optical materials are evolving from “general-purpose” solutions toward application-specific customization. Different application scenarios impose fundamentally different requirements on transm