1. Aluminum Nitride (AlN) Substrate（1~2inch）
| Item | AlN Substrate（1~2inch） | |||
| Diameter | 25.4±0.3mm | 50.8±0.5mm | ||
| Thickness | 400±50μm | 400±50μm | ||
| Crystal Type | 2H | |||
| Surface Orientation | (0001) ± 0.5° | |||
| Primary Flat Orientation | (10-10) ± 5.0˚ | |||
| Secondary Flat Orientation | Al face up: 90.0˚ CW from Primary ± 5.0˚ | |||
| Front Surface Finish | Al face:≤ 0.5 nm | |||
| Back Surface Finish | N face:≤ 1.2μm | |||
| Laser Mark | Back side：N-Face | |||
| TTV | ≤25μm | ≤30μm | ||
| BOW | ≤30μm | ≤35μm | ||
| WARP | ≤40μm | ≤45μm | ||
| Edge Exclusion | ≤5 mm | |||
Aluminum nitride(AlN) is a solid nitride of aluminium,white or off-white.It exists primarily in the hexagonal wurtzite crystal structure, but also has a metastable cubic zincblende phase, which is synthesized primarily in the form of thin films.AlN has the electrically insulating nature and high thermal conductivity.
| Crystal Structure | Hexagonal |
| Lattice Constant(nm) | a=0.3112Å c=0.4982Å |
| Density(g/cm3) | 3.23 |
| Melting point（℃） | 2750 |
| Mohs Hardness(mohs) | 9 |
| Dielectric Constant | 8.15 |
| Band Gap(eV) | 6.2 |
| Breakdown Electrical Field (MV/cm) | 11.7 |
| Thermal Conductivity(W/cm.K) | 4.8 |
| Thermal Expansion | 4. 84*10-6/k |
