Silicon carbide (SiC) has become a key material in power electronics, RF devices, and photonics research due to its excellent thermal conductivity, high breakdown electric field, and superior optical properties. While larger wafers attract more attention in industrial production, 2-inch SiC substrates play a critical role in research, prototyping, and laboratory testing. This article introduces the applications, advantages, and domestic development of 2-inch SiC substrates.

Key Applications of 2-Inch SiC Substrates

1. Power Electronics Development

Used for experimental verification of small-batch MOSFETs, Schottky diodes (SBDs), and IGBTs.

The small wafer size allows rapid testing of process parameters and device performance in laboratories.

2. RF Devices

Semi-insulating 2-inch wafers are suitable for developing microwave devices, small power amplifiers, or antenna driver modules.

Supports experiments on high-frequency characteristics and thermal management.

3. Photonics and Optoelectronics Research

High-purity undoped wafers are used for photonic crystals, nonlinear optical materials, and optical property measurements.

Enables testing of transmittance, refractive index, and defect density.

4. Epitaxial Growth Experiments

Serves as the base for 4H-SiC or 6H-SiC epitaxial layer growth.

Used to study the impact of different growth processes on crystal quality and defect control.

5. Research and Educational Use

Cost-effective and easy to handle, suitable for universities and research institutions.

Facilitates material characterization experiments and hands-on training for students.

Advantages of 2-Inch SiC Substrates

Low cost: More affordable than 3-inch or larger wafers, ideal for R&D and lab use.

High crystal quality: Supports precise experiments and material characterization.

High flexibility: Suitable for rapid prototyping and process verification.

Domestic Development

Several companies and research institutions in China produce 2-inch SiC substrates, mainly for research and small-batch device development. Production techniques include Physical Vapor Transport (PVT) and Chemical Vapor Deposition (CVD), covering 4H-SiC, 6H-SiC, and 3C-SiC types.

These 2-inch wafers are widely used in material research, epitaxial growth experiments, and development of small-scale power and photonic devices. As domestic technology advances and market demand grows, the production capacity and applications of 2-inch SiC substrates are expected to expand further.

Conclusion

2-inch SiC substrates occupy a crucial niche in research and laboratory applications. Their low cost, high crystal quality, and operational flexibility make them valuable for power electronics R&D, RF device prototyping, and photonics research. With the steady improvement of domestic production capabilities, 2-inch SiC wafers will play an increasingly important role in scientific exploration, education, and small-scale commercial applications.

Supplier Highlight

JXT Technology Co., Ltd. can provide 2-inch and even smaller SiC substrates, meeting the needs of research, education, and small-scale prototyping. They offer high-quality 2-inch SiC wafers suitable for power electronics, RF applications, and photonics research.