Language

SiC Substrate wafer

SiC Substrate wafer

Language

Follow us

linkdin

Blogs

About Us

Blogs

HOME > ABOUT US > Blogs

8inch Silicon Carbide Ingot

published on 2025-04-24

8inch Silicon Carbide Ingot can be customized

4H-N Type
Diameter:200mm

Thickness: 12.88mm

As follow:

Share

Hot news

Impact of Hardness Characteristics of Sapphire, Silicon Carbide, Silicon Wafers, and Quartz on Cutting, Grinding, and Polishing Processes

The hardness of crystalline materials is a core parameter that determines the selection ...

Learn more >>
Material Properties, Manufacturing Technologies, and Semiconductor & Optical Market Applications of Single-Crystal Diamond Substrates

Single-crystal diamond substrates, formed by sp³-hybridized carbon atoms in a tetra...

Learn more >>
Laser Machining of SiC (Silicon Carbide): Current Status, Applications and Challenges

Figure: Typical laser machining of SiC — cutting, ablation and microfabrication....

Learn more >>

We Provide Customers with High-quality SiC, Sapphire Wafers and Substrates
Products Silicon Carbide Wafer (SiC Wafer) Silicon Carbide Epitaxial Wafer Sapphire Substrate Wafer Quartz glass wafer Silicon Wafer CVD Diamond Substrate AlN on Sapphire Epitaxial Wafer Laser processing
Technical Support
About Us Company Profile Blogs
Contact TEl:+86 18961736370 E-mail:anna@jxtwafer.com Address: No.79 Zhongshan South Road, Wuxi City, China.

2022 © SiC Wafers and GaN Wafers Manufacturer 网站统计